| 摘要 |
PURPOSE:To form a reversed picture respectively from positive and negative resists. CONSTITUTION:A resist 1 applied on a substrate is pattern-exposed by an ionizing radiation 4. The acid 5 generated in the resist by the exposure is exposed to an alkaline atmosphere 6 under atmospheric or reduced pressure or dipped in an alkaline soln. or the alkaline soln. is applied to neutralize the acid, and then the entire surface is exposed to an ionizing radiation 7 and developed to form a reversed resist pattern 9. Consequently, an optional pattern, negative or positive, is formed from the negative or positive resist. |
