MOS transistor switch without body effect

摘要

MOS-transistor switch without body effect comprising a pair of p-channel transistors (M1, M2) inserted in series between two connection terminals (A, B) and a third transistor (M3) with n-channel which is inserted between a connection node of the pair and a minimum potential reference (VSS) and a fourth transistor (M4) with n-channel in parallel with the pair of transistors (M1, M2). The substrates of the transistors of the pair are connected to the connection terminals (A, B). The substrate both of the third transistor (M3) and the fourth transistor (M4) is connected to the potential reference (VSS). $$