| 摘要 |
PURPOSE: To eliminate any surface roughening or mixing of impurities and to suppress without fail, the generation of oxygen precipitation and oxide- induced stacking faults in the vicinity of the surface by applying compression stress of a specific magnitude in the vicinity of the surface of an oxygen- containing silicon substrate. CONSTITUTION: An oxygen-containing silicon substrate 11 is heat-treated at approx. 800 deg.C in a transverse type diffusion furnace to which nitrogen is fed at the rate of about 5l/min so that oxygen-precipitated nuclei and micro-fault nuclei are intentionally formed on the surface of the oxygen containing silicon substrate 11. Next, the temperature of the silicon substrate 11 is held in the range of predetermined temperatures under 400 deg.C and a thin film 11 of a thickness of tq having compression stress as internal stress is formed over the entire reverse side 11a of the silicon substrate 11 by means of the sputtering or CVD process. And a substrate 10 on which a compression stress of 1.0-8.0×10<6> dyn/cm<2> acts is formed in the vicinity of the surface 11b of the silicon substrate 11. This makes it possible to suppress without fail the generation of oxygen precipitation and resultant micro-faults in the vicinity of the surface 11b of the silicon substrate 11.
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