Semiconductor layer structure and recording medium for a large capacity memory

摘要

A layered structure for a semiconductor substrate has a planar surface, lighter weight, and increased flexural rigidity. By decreasing warping in a multilayered recording medium that arises when forming the recording layer, while suppressing an increase in the weight of the memory substrate, a recording medium for a compact, large capacity memory device can be manufactured. The recording medium is positioned opposite a read/write circuit substrate that is provided with a plurality of miniature probes. A recording layer is formed on a front surface of a memory substrate, a beam structure for reinforcing flexural rigidity is formed on a back surface of said memory substrate. A conductive layer may be formed between the memory substrate and the recording layer.