发明名称 |
METHOD OF ANISOTROPIC ETCHING OF SUBSTRATES |
摘要 |
A method of plasma etching of silicon that utilizes the plasma to provide laterally defined recess structures through a mask. The method is based on the variation of the plasma parameters to provide a well-controlled anisotropic etch, while achieving a very high etch rate, and a high selectivity with respect to a mask. A mixed gas is introduced into the vacuum chamber after the chamber is evacuated, and plasma is generated within the chamber. The substrate's surface is exposed to the plasma. Power sources are used for formation of the plasma discharge. An integrated control system is used to modulate the plasma discharge power and substrate polarization voltage levels.
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申请公布号 |
US2001044213(A1) |
申请公布日期 |
2001.11.22 |
申请号 |
US19990295100 |
申请日期 |
1999.04.21 |
申请人 |
PANDHUMSOPORN TAMARAK;YU KEVIN;FELDBAUM MICHAEL;PUECH MICHEL |
发明人 |
PANDHUMSOPORN TAMARAK;YU KEVIN;FELDBAUM MICHAEL;PUECH MICHEL |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;(IPC1-7):H01L21/311 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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