发明名称 SOLID-STATE IMAGE PICKUP ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a solid-state image pickup element where the incidence of multiplex reflected light and scattered light is reduced, an S/N is improved and the occurrence of smear phenomenon and an interference stripe at the time of laser irradiation image pickup is eliminated. SOLUTION: A channel stop 2 is arranged in a P-type silicon substrate 1, a surface is oxidized and a gate oxidized film 3 is generated. A polysilicon gate electrode 4 and an interlayer insulating film 5 are formed on it. A shielding film 6 having an opening part is formed in CCD having a plurality of accumulation pixels (not illustrated) with respect to one light receiving pixel 8 so that incident light is made incident only on the light receiving pixel 8. A reflection preventing film 12 with low reflectance is formed on the shielding film 6 through a protection film 7. Most light beams which are made incident on the reflection preventing film 12 are absorbed and faint light beams become multiplex reflecting light beams 10 by cover glass 9. The amount becomes remarkably small with respect to direct incident light 11 and the scattered light of the respective films can be reduced.
申请公布号 JP2002158345(A) 申请公布日期 2002.05.31
申请号 JP20000355200 申请日期 2000.11.22
申请人 SHIMADZU CORP 发明人 TAKUBO KENJI
分类号 H01L27/14;H01L27/148;H01L31/0216;H04N5/335;H04N5/359;H04N5/369;H04N5/3725;(IPC1-7):H01L27/148 主分类号 H01L27/14
代理机构 代理人
主权项
地址