发明名称 One time programming memory cell using MOS device
摘要 An electroless plating apparatus is provided. The electroless plating apparatus includes a wafer holder; a chemical dispensing nozzle over the wafer holder; a conduit connected to the chemical dispensing nozzle; and a radiation source over the wafer holder.
申请公布号 US7307880(B2) 申请公布日期 2007.12.11
申请号 US20050272657 申请日期 2005.11.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 KO CHIN-YUAN;TSAI YUNG-SHENG;LIAO PEI-CHUN
分类号 G11C11/34 主分类号 G11C11/34
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