发明名称 |
ESD POWER CLAMP IN TRIPLE WELL |
摘要 |
A power clamp in a triple well is disclosed. A metal oxide semiconductor (MOS) varactor is used in a triggering circuit and is positioned in a first N type well. An N-channel field effect transistor is positioned in a P-type well. A P-channel field effect transistor is positioned in a second N-type well. The first N-type well is electrically isolated from the second N-type well, and electrically contacts the substrate of the power clamp.
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申请公布号 |
US2008029824(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20060461831 |
申请日期 |
2006.08.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BAIZLEY ARNOLD E.;HAUVILLER PHILIPPE;VOLDMAN STEVEN H. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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