发明名称 Substrate processing method
摘要 A substrate processing method includes: performing an etching process to form a predetermined pattern on an etching-target film disposed on a substrate; denaturing a substance remaining after the etching process to be soluble in a predetermined liquid; then, performing a silylation process on a surface of the etching-target film having the pattern formed thereon; and then, supplying the predetermined liquid to dissolve and remove the denatured substance.
申请公布号 US7482281(B2) 申请公布日期 2009.01.27
申请号 US20060517272 申请日期 2006.09.08
申请人 TOKYO ELECTRON LIMITED 发明人 FUJII YASUSHI;TOSHIMA TAKAYUKI;ORII TAKEHIKO
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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