| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser capable of reducing light scattering on an interface between a dielectric DBR and a semiconductor region due to a mesa shape of a junction region including a tunnel junction. SOLUTION: Semiconductor layers 13a and 13b of a semiconductor DBR 13 are arrayed alternately. The junction region 17 includes the tunnel pn junction TJ. The dielectric DBR 19 has refractive index variation provided periodically in a direction of an axis Ax. A III-V compound semiconductor layer 21 is provided between the junction region 17 and the dielectric DBR 19. The dielectric DBR 19 includes dielectric layers 19a and 19b. The dielectric layer 19a is disposed on a group III-V compound semiconductor layer 21, and the dielectric layer 19b is disposed right above the dielectric layer 19a. The dielectric layer 19a has an average refractive index n<SB>AV1</SB>smaller than the refractive index of the group III-V compound semiconductor layer 21 and the dielectric layer 19b has an average refractive index n<SB>AV2</SB>smaller than the average refractive index n<SB>AV1</SB>. The refractive index variation 25 is formed on the interface between the dielectric layer 19a and dielectric layer 19b. COPYRIGHT: (C)2009,JPO&INPIT
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