发明名称 |
Boosting voltage circuit for use in flash memory device, has level detector receiving programming input signals, detecting active input signals and delivering detected signals of varying weight that depends upon active signals |
摘要 |
The circuit has a level detector (331) receiving a set of programming input signals and detecting which of the signals are active. The detector outputs detected signals of varying weight based upon the active signals. A signal generator (333) receives the detected signals from the detector and outputs a generated signal with a varying voltage level proportional to the varying weight of the detected signals. An independent claim is also included for a method of controlling a bias source in a memory device, comprising a set of programming input signals.
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申请公布号 |
FR2870381(A1) |
申请公布日期 |
2005.11.18 |
申请号 |
FR20050004826 |
申请日期 |
2005.05.13 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SEO MYOUNG KYU;LEE HYO SANG |
分类号 |
G11C7/10;G11C16/10;G11C16/30;(IPC1-7):G11C16/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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