Semiconductor device and method of forming patterned repassivation openings between RDL and UBM to reduce adverse effects of electro-migration

摘要

A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.

主权项

1. A method of making a semiconductor device, comprising:
providing a semiconductor die; forming a first conductive layer over the semiconductor die; forming an insulating layer over the first conductive layer; forming a first opening and a second opening in the insulating layer over the first conductive layer; and forming a first bump over the first and second openings in the insulating layer.