| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which parasitic resistance in a source/drain region is reduced.SOLUTION: A semiconductor device 100 comprises: a channel region 10a of an oxide semiconductor layer 10 containing indium (In), gallium (Ga) and zinc (Zn); a source region 11a and a drain region 11b which are provided across the channel region and at east one region has an indium (In) concentration higher than that of the channel region and contain at least one element selected from a group consisting of titanium (Ti), tungsten (W), copper (Cu), zinc (Zn), aluminum (Al), lead (Pb) and stannum (Sn); a gate insulation film 12 provided on the channel region; and a gate electrode 14 provided on the gate insulation film.SELECTED DRAWING: Figure 1 |
