| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit deterioration in radiation performance while inhibiting generation of voids in an encapsulated resin body between heat sinks.SOLUTION: A semiconductor device manufacturing method comprises a preparation process in which a connection structure 52 is formed by sandwiching first semiconductor chips 16U, 16L each having an IGBT and second semiconductor chips 18U, 18L each having a FWD with first heat sinks 20U, 20L and second heat sinks 22U, 22L. At this time, the first semiconductor chip out of corresponding first semiconductor chip and second semiconductor chip is arranged closer to a gate. The first heat sink 20U having a notch 40 is used and in projection view from a Z direction, each of the heat sinks are arranged in such a manner that the notch is located at a position which is part of a periphery of the second semiconductor chip 18U farthest from the gate and which includes a position farthest from the gate, and the first heat sink and the second heat sink cover the remaining part of the periphery of the second semiconductor chip and peripheries of the remaining semiconductor chips.SELECTED DRAWING: Figure 9 |
