| 摘要 |
PROBLEM TO BE SOLVED: To improve photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: In a method of manufacturing a photoelectric conversion device 11 which comprises the steps of: providing, on a principal surface of a substrate 1, a photoelectric conversion body X which contains a first semiconductor layer 3 having a first wavelength of 750 nm or more, the first wavelength corresponding to bandgap energy, and a second semiconductor layer 4 which is coupled to the first semiconductor layer 3 by heterojunction and has larger bandgap energy than the first semiconductor layer 3; sealing the photoelectric conversion body X with sealing resin 11; and irradiating the photoelectric conversion body X with first light L which can photo-excite the first semiconductor layer 3, the first light L contains light of a wavelength region between a second wavelength corresponding to the bandgap energy of the second semiconductor layer 4 and 750 nm, and the light intensity in the wavelength region of the second wavelength or less and the light intensity in the wavelength region of 750 nm or more are equal to 10% or less of the maximum light intensity between the second wavelength and 750 nm.SELECTED DRAWING: Figure 2 |
