发明名称 SELF-SELECTING PCM DEVICE NOT REQUIRING DEDICATED SELECTOR TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a self-selecting PCM device that does not require a dedicated selector transistor.SOLUTION: A self-selecting storage device is formed by depositing zinc oxide (ZnO) over layer-change material with the use of an atomic layer deposition (ALD). A diode formed at a ZnO/GST interface exhibits both rectification capability and storage capability in a PCM architecture.SELECTED DRAWING: Figure 7
申请公布号 JP2016136631(A) 申请公布日期 2016.07.28
申请号 JP20160035291 申请日期 2016.02.26
申请人 MICRON TECHNOLOGY INC 发明人 REDAELLI ANDREA;PIROVANO AGOSTINO
分类号 H01L27/105;H01L45/00 主分类号 H01L27/105
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