发明名称 |
SELF-SELECTING PCM DEVICE NOT REQUIRING DEDICATED SELECTOR TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a self-selecting PCM device that does not require a dedicated selector transistor.SOLUTION: A self-selecting storage device is formed by depositing zinc oxide (ZnO) over layer-change material with the use of an atomic layer deposition (ALD). A diode formed at a ZnO/GST interface exhibits both rectification capability and storage capability in a PCM architecture.SELECTED DRAWING: Figure 7 |
申请公布号 |
JP2016136631(A) |
申请公布日期 |
2016.07.28 |
申请号 |
JP20160035291 |
申请日期 |
2016.02.26 |
申请人 |
MICRON TECHNOLOGY INC |
发明人 |
REDAELLI ANDREA;PIROVANO AGOSTINO |
分类号 |
H01L27/105;H01L45/00 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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