发明名称 |
Inverter device |
摘要 |
An inverter device includes; a switching element; a plurality of flyback diodes each connected in parallel with the switching element; a first conductor plate connected to anode terminals of the flyback diodes and to one side of the switching element; and a second conductor plate connected to cathode terminals of the flyback diodes and to the other side of the switching element. Each of the flyback diodes is formed in a polygonal shape, and the two flyback diodes in each pair of the flyback diodes that are arranged in mutually adjacent positions are arranged so that a vertex of one opposes a vertex of the other. |
申请公布号 |
US9407166(B2) |
申请公布日期 |
2016.08.02 |
申请号 |
US201414198034 |
申请日期 |
2014.03.05 |
申请人 |
Hitachi, Ltd. |
发明人 |
Ohnishi Masami;Tokuyama Takeshi |
分类号 |
H02M7/48;H02M7/53;H02M7/00;H01L23/00;H01L25/03;H02M1/34 |
主分类号 |
H02M7/48 |
代理机构 |
Crowell & Moring LLP |
代理人 |
Crowell & Moring LLP |
主权项 |
1. An inverter device, comprising:
a switching element having a front side surface and a back side surface; a plurality of flyback diodes each connected in parallel with the switching element; a first conductor plate connected to anode terminals of the flyback diodes and to the front side surface of the switching element; and a second conductor plate connected to cathode terminals of the flyback diodes and to the back side surface of the switching element; wherein: the switching element and the plurality of flyback diodes are sandwiched between the first conductor plate and the second conductor plate; each of the flyback diodes is formed in a polygonal shape; the plurality of the flyback diodes includes a first flyback diode and a second flyback diode which is arranged closest to the first flyback diode; and the first flyback diode and the second flyback diode are arranged so that a closest part of the first flyback diode to the second flyback diode is a first vertex of the first flyback diode and a closet part of the second flyback diode to the first flyback diode is a second vertex of the second flyback diode. |
地址 |
Tokyo JP |