Semiconductor device and formation thereof

摘要

A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a doped region, in some embodiments. The semiconductor device includes a gate over a channel portion of the fin. The gate including a gate electrode over a gate dielectric between a first sidewall spacer and a second sidewall spacer. The first sidewall spacer includes an initial first sidewall spacer over a first portion of a dielectric material. The second sidewall spacer includes an initial second sidewall spacer over a second portion of the dielectric material.

主权项

1. A semiconductor device comprising:
a fin comprising a doped region; a gate over a channel portion of the fin, the gate comprising a gate electrode over a gate dielectric between a first sidewall spacer and a second sidewall spacer; the first sidewall spacer comprising:
an initial first sidewall spacer over a first portion of a dielectric material, the dielectric material comprising at least one of silicon nitride, aluminum oxide or silicon oxy nitride; the second sidewall spacer comprising:
an initial second sidewall spacer over a second portion of the dielectric material; and a dielectric feature on an outer surface of the doped region, wherein:
the fin has a first wall extending along a first plane;the doped region defines a first furrow on a first side of the first plane; andthe dielectric feature is disposed within the first furrow, the dielectric feature in contact with the first furrow between a first end of the dielectric feature and a second end of the dielectric feature, the first end separated a first distance from the first plane.