Display backplane having multiple types of thin-film-transistors

摘要

There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the present disclosure, at least one of the TFTs implementing the circuit of pixels in the active area is an oxide TFT (i.e., TFT with oxide semiconductor) while at least one of the TFTs implementing the driving circuit next to the active area is a LTPS TFT (i.e., TFT with poly-Si semiconductor).

主权项

1. A display, comprising:
a substrate defined with a first area and a second area; a low-temperature-poly-silicon (LTPS) layer provided in the first area; a first insulation layer provided on the LTPS layer in the first area; a metal oxide layer provided in the first area and the second area, the metal oxide layer in the first area being provided on the first insulation layer; a second insulation layer provided in the first area and the second area, at least some portion of the second insulation layer on the metal oxide layer in the second area being thinner than other portions of the second insulation layer on the metal oxide layer in the second area; a plurality of contact holes exposing source/drain regions of the LTPS layer in the first area and source/drain regions of the metal oxide layer in the second area; a first metal layer providing a plurality of electrodes in the first area and the second area, the first metal layer in the first area including source/drain electrodes in contact with the exposed source/drain regions of the LTPS layer, and the first metal layer in the second area including source/drain electrodes in contact with the exposed source/drain regions of the metal oxide layer and a gate electrode insulated from the metal oxide layer by the thinner portion of the second insulation layer; a third insulation layer covering the first metal layer in the first area and the second area; and a second metal layer being in contact with at least one of the source/drain electrodes in the first area and the second area via a contact hole through the third insulation layer between the first metal layer and the second metal layer, wherein the LTPS layer in the first area serves as an active layer of an LTPS TFT and the metal oxide layer in the second area serves as an active layer of an oxide TFT, wherein the metal oxide layer in the first area and the source/drain regions of the metal oxide layer in the second area have higher electrical conductivity than the metal oxide layer in the second area that forms a channel region of the oxide TFT.