Memory cell comprising non-self-aligned horizontal and vertical control gates

摘要

The present disclosure relates to a memory cell comprising a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. Application mainly to the production of a split gate memory cell programmable by hot-electron injection.

主权项

1. A memory cell, comprising:
a vertical selection gate extending in a trench made in a semiconductor substrate; a floating gate extending on the substrate; a horizontal control gate extending above the floating gate, wherein the floating gate has a protuberance which extends beneath an upper surface of the substrate; and a first dielectric layer positioned within the substrate and between the protuberance of the floating gate and the vertical selection gate.