| 发明名称 | Transistor arrangement | ||
| 摘要 | A transistor arrangement comprising an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire; wherein the semiconductor body includes an RF-return current path for carrying return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said body, said strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure. | ||
| 申请公布号 | US9406659(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201414524663 | 申请日期 | 2014.10.27 |
| 申请人 | Ampleon Netherlands B.V. | 发明人 | Hammes Petra Christina Anna;van der Zanden Josephus Henricus Bartholomeus;Heeres Rob Mathijs;van Zuijlen Albert Gerardus Wilhelmus Philipus |
| 分类号 | H01L25/16;H01L23/522;H01L23/00;H01L23/66 | 主分类号 | H01L25/16 |
| 代理机构 | McDonnell Boehnen Hulbert & Berghoff LLP | 代理人 | McDonnell Boehnen Hulbert & Berghoff LLP |
| 主权项 | 1. A transistor arrangement comprising; an electrically conductive substrate; a semiconductor body including a transistor structure, the transistor structure including a source terminal connected to said electrically conductive substrate; a bond pad providing a connection to the transistor structure configured to receive a bond wire, wherein the semiconductor body includes an RF-return current path configured to carry a return current associated with said bond wire, said RF-return current path comprising a strip of metal arranged on said semiconductor body, said RF-return current strip configured such that it extends beneath said bond pad and is connected to said source terminal of the transistor structure. | ||
| 地址 | Nijmegen NL | ||