发明名称 PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT
摘要 PROBLEM TO BE SOLVED: To easily improve adhesion of an electrode layer even when the electrode layer is disposed only to a rear face of a semiconductor substrate.SOLUTION: A photoelectric conversion element includes: first conductivity type or second conductivity type amorphous silicon films (3, 5) provided on one side of a first conductivity type or second conductivity type semiconductor substrate 1; and electrode layers (11, 12) in contact with the amorphous silicon films (3, 5), respectively. The electrode layers (11, 12) include silver and titanium.SELECTED DRAWING: Figure 1
申请公布号 JP2016143855(A) 申请公布日期 2016.08.08
申请号 JP20150021143 申请日期 2015.02.05
申请人 SHARP CORP 发明人 KOBAYASHI MASAMICHI;OKAMOTO CHIKAO;HIEDA TAKESHI;ZENIYA YOSHITAKA
分类号 H01L31/0224;H01L21/28;H01L21/285;H01L31/0747 主分类号 H01L31/0224
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