| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method of a carbon film that hardly causes reaction damage to a workpiece or a treatment chamber during production processing, even when chlorine gas is used for lowering thermal decomposition temperature in film deposition of a carbon film.SOLUTION: A film deposition method of a carbon film includes a step (step 2) for depositing a carbon film on the surface to be treated of a workpiece and a step for thermal treatment of the workpiece. In the step for depositing a carbon film, a hydrocarbon-based carbon source gas and chlorine gas for lowering thermal decomposition temperature of the hydrocarbon-based carbon source gas are supplied to the workpiece to deposit the carbon film on the surface to be treated of the workpiece at a temperature lower than the thermal decomposition temperature of the hydrocarbon-based carbon source gas itself. In the step for thermal treatment, the workpiece on which the carbon film is deposited is supplied with nitrogen gas, hydrogen gas, or a gas containing nitrogen and hydrogen to subject the workpiece on which the carbon film is deposited to thermal treatment at a temperature higher than the film deposition temperature.SELECTED DRAWING: Figure 1 |
