发明名称 SECONDARY ION MASS SPECTROMETRY APPARATUS, METHOD, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a secondary ion mass spectrometry, capable of suppressing the generation and growth of surface roughening in an ion irradiation surface caused by effect of post-coating delay rotation in a depth direction analysis of a material composition by an SIMS, and performing a measurement of high depth resolution while ensuring strictness of the depth direction analysis.SOLUTION: A secondary ion mass spectrometry: irradiates and scans a primary ion in an irradiation range of a sample surface; measures an intensity of a secondary ion radiated from the sample surface; and alternately and repeatedly executes, when measuring a depth direction distribution of a material composition of the sample, a first step of scanning the primary ion while irradiating in the irradiation range and measuring the second ion intensity in a state of mounting the sample and stopping a rotation of a sample stage freely rotating as a center of a rotational axis in a mounting surface of the sample and stilling the sample, and a second step of allowing the sample as a center of the rotational axis to be rotate at a constant angle in a state of stopping the irradiation of the primary ion.SELECTED DRAWING: Figure 5
申请公布号 JP2016154117(A) 申请公布日期 2016.08.25
申请号 JP20150032104 申请日期 2015.02.20
申请人 FUJITSU LTD 发明人 SASAKI MAKOTO
分类号 H01J37/252;G01N23/225;G01N27/62 主分类号 H01J37/252
代理机构 代理人
主权项
地址