发明名称 Fluorine-containing polymerized HMDSO applications for OLED thin film encapsulation
摘要 Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer and an interface layer disposed on the organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. In one example, the method includes depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon, depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer, depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, and depositing a second barrier layer on the interface layer.
申请公布号 US9502686(B2) 申请公布日期 2016.11.22
申请号 US201414339705 申请日期 2014.07.24
申请人 APPLIED MATERIALS, INC. 发明人 Chen Jrjyan Jerry;Choi Soo Young
分类号 H01L21/00;H01L21/02;H01L21/312;H01L35/24;H01L51/52;H01L51/56 主分类号 H01L21/00
代理机构 Patterson & Sheridan, LLP 代理人 Patterson & Sheridan, LLP
主权项 1. A method for forming an encapsulating structure on an organic light emitting diode (OLED) device, comprising: depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon;depositing a buffer layer with a fluorine-containing plasma formed from a first gas mixture containing a polymer gas precursor and a fluorine containing gas on the first barrier layer; depositing an interface layer on the buffer layer with a second gas mixture containing the polymer gas precursor, the interface layer having a gradient fluorine concentration; and depositing a second barrier layer on the interface layer.
地址 Santa Clara CA US