发明名称 |
Symmetric dual piezoelectric stack microelectromechanical piezoelectric devices |
摘要 |
The present invention relates to a device comprising an elongate resonator beam extending between first and second ends. A base is connected to the resonator beam at the first end with the second end extending from the base as a structural layer. The elongate resonator beam comprises either: (1) a first oxide layer on a first piezoelectric stack layer over a structural layer on a second oxide layer over a second piezoelectric stack layer on a third oxide layer or (2) a first oxide layer on a first piezoelectric stack layer over a second oxide layer on a structural layer over a third oxide layer on a second piezoelectric stack over a fourth oxide layer. Also disclosed is a system comprising an apparatus and the device, as well as methods of making and using the device. |
申请公布号 |
US9502635(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201414201293 |
申请日期 |
2014.03.07 |
申请人 |
MicroGen Systems, Inc. |
发明人 |
Andosca Robert G.;Vaeth Kathleen M.;Lacroix Didier |
分类号 |
H01L41/047;H01L41/053;H01L41/083;H01L41/113;H01L41/09;H03H3/007;H03H9/24;H01L41/08 |
主分类号 |
H01L41/047 |
代理机构 |
LeClairRyan, a Professional Corporation |
代理人 |
LeClairRyan, a Professional Corporation |
主权项 |
1. A device comprising
an elongate resonator beam extending between first and second ends and a base connected to said elongate resonator beam at the first end with the second end extending from said base as a structural layer, wherein said elongate resonator beam comprises either: (1) a first oxide layer on a first piezoelectric stack layer over a structural layer on a second oxide layer over a second piezoelectric stack layer on a third oxide layer or (2) a first oxide layer on a first piezoelectric stack layer over a second oxide layer on a structural layer over a third oxide layer on a second piezoelectric stack over a fourth oxide layer. |
地址 |
West Henrietta NY US |