发明名称 Symmetric dual piezoelectric stack microelectromechanical piezoelectric devices
摘要 The present invention relates to a device comprising an elongate resonator beam extending between first and second ends. A base is connected to the resonator beam at the first end with the second end extending from the base as a structural layer. The elongate resonator beam comprises either: (1) a first oxide layer on a first piezoelectric stack layer over a structural layer on a second oxide layer over a second piezoelectric stack layer on a third oxide layer or (2) a first oxide layer on a first piezoelectric stack layer over a second oxide layer on a structural layer over a third oxide layer on a second piezoelectric stack over a fourth oxide layer. Also disclosed is a system comprising an apparatus and the device, as well as methods of making and using the device.
申请公布号 US9502635(B2) 申请公布日期 2016.11.22
申请号 US201414201293 申请日期 2014.03.07
申请人 MicroGen Systems, Inc. 发明人 Andosca Robert G.;Vaeth Kathleen M.;Lacroix Didier
分类号 H01L41/047;H01L41/053;H01L41/083;H01L41/113;H01L41/09;H03H3/007;H03H9/24;H01L41/08 主分类号 H01L41/047
代理机构 LeClairRyan, a Professional Corporation 代理人 LeClairRyan, a Professional Corporation
主权项 1. A device comprising an elongate resonator beam extending between first and second ends and a base connected to said elongate resonator beam at the first end with the second end extending from said base as a structural layer, wherein said elongate resonator beam comprises either: (1) a first oxide layer on a first piezoelectric stack layer over a structural layer on a second oxide layer over a second piezoelectric stack layer on a third oxide layer or (2) a first oxide layer on a first piezoelectric stack layer over a second oxide layer on a structural layer over a third oxide layer on a second piezoelectric stack over a fourth oxide layer.
地址 West Henrietta NY US