| 主权项 |
1. A semiconductor device, comprising:
a first member including first and second transistors on a front surface side of a first semiconductor substrate, the first transistor being a memory selection transistor, the second transistor being other than a memory selection transistor; and a second member including an insulating layer in which are embedded first and second resistance change devices, a conductive layer, and first and second connection layer portions, the first connection layer portion connecting the first resistance change device with the first transistor, the second connection layer portion connecting the second resistance change device with the second transistor, the first and second resistance change devices being commonly connected to the conductive layer, the insulating layer of the second member being bonded to the semiconductor substrate at a back surface of the first member. |
