Non-volatile memory device and method of manufacturing the same

摘要

A preliminary tunnel insulation pattern and a preliminary charge storage pattern are formed on each active pattern extending in a direction, and a trench is defined between structures including the active pattern, the preliminary tunnel insulation pattern and the preliminary charge storage pattern. A preliminary isolation pattern partially fills the trench. A dielectric layer and a control gate electrode layer are formed on the preliminary charge storage pattern and the preliminary isolation pattern. The control gate electrode layer, the dielectric layer, the preliminary charge storage pattern and the preliminary tunnel insulation pattern are patterned to form gate structures including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern and a control gate electrode. The preliminary isolation pattern is isotropically etched to form an isolation pattern and a first air gap. An insulating interlayer is formed between the gate structures to keep the first air gap.

主权项

1. A method of manufacturing a non-volatile memory device, the method comprising:
sequentially forming a preliminary tunnel insulation pattern and a preliminary charge storage pattern on each of a plurality of active patterns of a substrate, each of the plurality of active patterns extending in a first direction; defining a trench between structures, each structure including an active pattern of the plurality of active patterns, a corresponding preliminary tunnel insulation pattern, and a corresponding preliminary charge storage pattern sequentially stacked; forming a liner on an inner wall of the trench; forming a preliminary isolation pattern on the liner to partially fill the trench, the preliminary isolation pattern including a material different from a material of the liner; sequentially forming a dielectric layer and a control gate electrode layer on the preliminary charge storage pattern, the liner, and the preliminary isolation pattern; patterning the control gate electrode layer, the dielectric layer, the preliminary charge storage pattern, and the preliminary tunnel insulation pattern to form a plurality of gate structures, each gate structure extending in a second direction substantially perpendicular to the first direction, each of the gate structure including a tunnel insulation pattern, a charge storage pattern, a dielectric layer pattern, and a control gate electrode sequentially stacked; isotropically etching a portion of the preliminary isolation pattern to form an isolation pattern and a first air gap on the isolation pattern, the first air gap extending in the first direction and having a bent top, wherein a first length of the first air gap under the gate structures in a third direction substantially perpendicular to a top surface of the substrate is greater than a first width of the first air gap under the gate structures in the second direction; and forming an insulating interlayer between the gate structures to keep the first air gap.