发明名称 |
Integrated circuit having shielding structure |
摘要 |
An integrated circuit includes a signal line and a plurality of shielding structures. The signal line is routed along a first direction and is in a first metallization layer. Each shielding structure includes a plurality of non-contiguous shielding patterns aligned along the first direction. The plurality of shielding structures includes a first and a second shielding structures in a second metallization layer that adjoins the first metallization layer and a third and a fourth shielding structures in a third metallization layer that adjoins the first metallization layer. The first metallization layer is between the second and the third metallization layers. The first and the second shielding structures are separated from each other along a second direction perpendicular to the first direction. The third and the fourth shielding structures are separated from each other along the second direction. |
申请公布号 |
US9502358(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201414332986 |
申请日期 |
2014.07.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Chen Chung-Hui |
分类号 |
H01L29/40;H01L23/552;H01L23/522;H01L27/02 |
主分类号 |
H01L29/40 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. An integrated circuit comprising:
a signal line routed along a first direction, the signal line being in a first metallization layer; and a plurality of shielding structures, each shielding structure comprising a plurality of non-contiguous shielding patterns aligned along the first direction, the plurality of shielding structures comprising:
a first shielding structure and a second shielding structure, the first and second shielding structures being in a second metallization layer that adjoins the first metallization layer, the first and the second shielding structures being separated from each other along a second direction perpendicular to the first direction; anda third shielding structure and a fourth shielding structure, the third and fourth shielding structures being in a third metallization layer that adjoins the first metallization layer, the first metallization layer being between the second and the third metallization layers, the third and the fourth shielding structures being separated from each other along the second direction. |
地址 |
TW |