发明名称 |
Semiconductor device and fabrication method thereof |
摘要 |
A method for forming a semiconductor device includes, sequentially, providing a substrate having a first region and a second region; forming a first dielectric layer on the substrate; forming a second dielectric layer having a plurality of first openings exposing portions of a top surface of the first dielectric layer; forming a first conductive layer in the first openings; etching the second dielectric layer and the first dielectric layer in the second region until the substrate is exposed to form a plurality of second openings; forming passivation regions in portions of the substrate exposed by the second openings; exposing the surface of the first dielectric layer in the second region; forming a third dielectric layer on the surface of the first dielectric layer and in the second openings; and forming a second conductive layer, a portion of which is configured as an inductor, over the third dielectric layer. |
申请公布号 |
US9502348(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201514941702 |
申请日期 |
2015.11.16 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Bao Xiaoyan;Ge Hongtao |
分类号 |
H01L23/522;H01L23/31;H01L27/06;H01L21/033;H01L21/768;H01L21/311;H01L49/02;H01L21/288;H01L21/321;H01L23/528;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A method for fabricating a semiconductor device, comprising:
providing a substrate having a first region and a second region; forming a first dielectric layer on a surface of the substrate; forming a second dielectric layer having a plurality of first openings exposing portion of a top surface of the first dielectric layer; forming a first conductive layer in the first openings; etching the second dielectric layer in the second region and the first dielectric layer in the second region until the surface of the substrate is exposed to form a plurality of second openings; forming passivation regions in portions of the substrate exposed by the second openings; exposing the surface of the first dielectric layer in the second region; forming a third dielectric layer on the surface of the first dielectric layer and in the second openings; and forming a second conductive layer, a portion of which is configured as an inductor, over the third dielectric layer in the second region. |
地址 |
Shanghai CN |