Method for manufacturing light emitting device

摘要

A method for manufacturing a light emitting device includes providing a wafer including a substrate, a light emitting structure layer and a plurality of electrodes, forming a phosphor layer so as to cover a surface of the wafer on a side of the substrate, dividing the wafer and the phosphor layer so as to form a plurality of light emitting elements, measuring a luminescent chromaticity of the plurality of light emitting elements so as to classify into a first light emitting element having a luminescent chromaticity within a required chromaticity range and a second light emitting element having a luminescent chromaticity outside the required chromaticity range, and forming a second light emitting device that includes the plurality ones of the second light emitting element and the luminescent chromaticity within the required chromaticity range by using the second light emitting element.

主权项

1. A method for manufacturing a light emitting device, comprising:
providing a wafer comprising a substrate, a light emitting structure layer formed on the substrate, and a plurality of electrodes formed on the light emitting structure layer; forming a phosphor layer comprising a resin and a phosphor so as to cover a surface of the wafer on a side of the substrate: dividing the wafer and the phosphor layer so as to form a plurality of light emitting elements each of which comprises the substrate, the light emitting structure layer, the electrodes and the phosphor layer; measuring a luminescent chromaticity of the plurality of light emitting elements so as to classify into a first light emitting element having a luminescent chromaticity within a required chromaticity range and a second light emitting element having a luminescent chromaticity outside the required chromaticity range; forming a first light emitting device that comprises a single one of the first light emitting element and the luminescent chromaticity within the required chromaticity range by using the first light emitting element; and forming a second light emitting device that comprises the plurality ones of the second light emitting element and the luminescent chromaticity within the required chromaticity range by using the second light emitting element, wherein the dividing of the wafer and the phosphor layer and the measuring of the luminescent chromaticity are conducted while the wafer covered with the phosphor layer is turned over such that a surface of the wafer on a side of the light emitting structure layer is faced up after the phosphor layer is formed.