Self-aligned via process flow

摘要

A method includes forming a first dielectric layer having at least one conductive feature embedded therein. A first plurality of conductive lines embedded in a second dielectric layer disposed above the first dielectric layer is formed. A first conductive line in the plurality of conductive lines contacts the conductive feature. The first conductive line is etched using a first etch mask to define a conductive via portion and a recessed line portion in the first conductive line. A second plurality of conductive lines embedded in a third dielectric layer disposed above the second dielectric layer is formed. A second conductive line in the second plurality of conductive lines contacts the conductive via portion and the third dielectric layer directly contacts the second dielectric layer.

主权项

1. A method comprising:
forming a first dielectric layer having at least one conductive feature embedded therein; forming a first plurality of conductive lines embedded in a second dielectric layer disposed above said first dielectric layer, wherein a first conductive line in said plurality of conductive lines contacts said conductive feature; etching said first conductive line using a first etch mask to define a conductive via portion and a recessed line portion in said first conductive line; and forming a second plurality of conductive lines embedded in a third dielectric layer disposed above said second dielectric layer, wherein a second conductive line in said second plurality of conductive lines contacts said conductive via portion and said third dielectric layer directly contacts said second dielectric layer wherein said conductive via portion has a first cross-sectional dimension corresponding to a width of said first conductive line and a second cross-sectional dimension corresponding to a width of said second conductive line.