发明名称 Substrate processing method, substrate processing apparatus, substrate processing system and recording medium
摘要 A substrate processing method can remove a part of a processing target film formed on a surface of a substrate W under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate W, and the processing target film is formed by heating the source material coated on the substrate W. Then, the substrate W having thereon the processing target film is placed within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and the part of the processing target film is removed by irradiating the ultraviolet ray to the substrate W.
申请公布号 US9514951(B2) 申请公布日期 2016.12.06
申请号 US201514744257 申请日期 2015.06.19
申请人 TOKYO ELECTRON LIMITED 发明人 Kaneda Masatoshi;Ohishi Yuzo;Yoshida Keisuke
分类号 H01L21/311;H01L21/67;H01L21/677;H01L21/687 主分类号 H01L21/311
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A substrate processing method, comprising: coating a source material of a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, on a substrate; forming the processing target film by heating the source material coated on the substrate; and removing a part of the processing target film by placing the substrate having thereon the processing target film within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and, then, by irradiating the ultraviolet ray to the substrate.
地址 Tokyo JP