发明名称 |
Substrate processing method, substrate processing apparatus, substrate processing system and recording medium |
摘要 |
A substrate processing method can remove a part of a processing target film formed on a surface of a substrate W under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate W, and the processing target film is formed by heating the source material coated on the substrate W. Then, the substrate W having thereon the processing target film is placed within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and the part of the processing target film is removed by irradiating the ultraviolet ray to the substrate W. |
申请公布号 |
US9514951(B2) |
申请公布日期 |
2016.12.06 |
申请号 |
US201514744257 |
申请日期 |
2015.06.19 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Kaneda Masatoshi;Ohishi Yuzo;Yoshida Keisuke |
分类号 |
H01L21/311;H01L21/67;H01L21/677;H01L21/687 |
主分类号 |
H01L21/311 |
代理机构 |
Pearne & Gordon LLP |
代理人 |
Pearne & Gordon LLP |
主权项 |
1. A substrate processing method, comprising:
coating a source material of a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, on a substrate; forming the processing target film by heating the source material coated on the substrate; and removing a part of the processing target film by placing the substrate having thereon the processing target film within a processing chamber under the oxygen-containing atmosphere where a gas flow velocity is equal to or smaller than 10 cm/sec, and, then, by irradiating the ultraviolet ray to the substrate. |
地址 |
Tokyo JP |