| 摘要 |
PURPOSE:To prevent fluctuation, nonunifomity, and anisotropy due to piezoelectric effect and to realize a semiconductor crystal structure which achieves a semiconductor element without fluctuation of characteristics due to distortion by laminating several unit layers periodically which consist of a specified first semiconductor layer and second semiconductor layer. CONSTITUTION:One or more unit layers 61 are laminated on a substrate 14, periodically, which comprises a first semiconductor layer 21, where group III atom layer and group V atom layer of III-V compound semiconductor are alternately laminated, and a second semiconductor layer 41, where group III atom layer and group V atom layer are laminated alternately on the first semiconductor layer 21 in the reverse order to that of the group III atom layer and group V atom layer of the first semiconductor layer 21. And the number of layers and the thickness of layer of atom constituting the first semiconductor layer 21 are made equal to those constituting the second semiconductor layer 41. For example, 70 layers of unit layer 61 consisting of the first GaAs layer 21 and a first Ge layer 31, where 20 layers are arranged in the order of Ga-As, and the second GaAs layer 41 and a second Ge layer 51, where 20 layers are arranged in the order of As-Ga. |
