| 摘要 |
CMOSFETs control the power in a bipolar logic gate to regulate its operating speed and hence its delay. In a specific embodiment of the invention, an n-channel CMOSFET controls the constant current through an emitter-coupled current switch, comprised of a pair of bipolar integrated circuit transistors. A p-channel CMOSFET, in series with each collector of the switch pair, establishes the collector voltage so as to maintain constant the output swing of the gate as the power through the gate is varied in order to regulate the gate delay. An error signal, indicative of factors that can cause variations in gate delay and the inverse of the error signal are generated by an on-chip circuit. The error signal is coupled to the n-channel CMOSFET and the inverse of the error signal is coupled to the p-channel CMOSFET. Thus, as the switch current is decreased in order to increase the gate delay, the collector impedance is simultaneously increased so the collector voltage, and hence the gate swing, remains constant. Similarly, when the switch current is increased, the collector impedance is decreased.
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