Chip packaging construction.

摘要

A silicon substrate having a thin film circuit layer (62) formed on the surface of the substrate (61) is laid on a metallic base (51) and a semiconductor chip (52) made of compound semiconductor such as gallium arsenide is disposed in a hole (63) defined in the central portion of the silicon substrate (61) so that the semiconductor chip (52) can be directly fixed to the metallic base (51) for dissipating the heat of the semiconductor chip (52). The connecting terminals of the semiconductor chip (52) are connected to thin film circuit layer (62) formed on the surface of the silicon substrate through wires (53). The heat generated in the semiconductor chip (52) can be transmitted to the metallic base (51) so that the heat is effectively dissipated.