发明名称
摘要 <P>PROBLEM TO BE SOLVED: To eliminate loss due to overcurrent passing via a level shift circuit and malfunctions due to overcurrent in an inverter device equipped with the level shift circuit converting a control signal level. <P>SOLUTION: This inverter device comprises the level shift circuit for transmitting control signals with different voltage levels to semiconductor switching devices, which is provided in an arm, having a plurality of semiconductor power switching devices connected between main terminals in series. The level shift circuit has a high-pressure proof MOSFET and a resistor, of which one end is connected to the high-pressure proof MOSFET via a diode. The diode blocks the overcurrent from passing via a parasitic diode of the high-pressure proof MOSFET in the level shift circuit. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP3724481(B2) 申请公布日期 2005.12.07
申请号 JP20030026578 申请日期 2003.02.04
申请人 发明人
分类号 H02M1/08;H02M7/538;H02P27/06 主分类号 H02M1/08
代理机构 代理人
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