COMPOSITE FOR POLISHING METAL FILM ON SEMICONDUCTOR SUBSTRATE, FLATTENING METHOD OF METAL FILM THEREON USING THE SAME, AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To polish a metal film on the semiconductor substrate at a high speed and restrain generation of defects on a metal film and the surface of an insulating film, by using composite for polishing a metal film on a semiconductor substrate which is composed of oxide containing magnesium and hydroxide abrasives. SOLUTION: An insulating film 2 is formed on a semiconductor substrate 1, and the insulating film 2 is flattened by using abrasives for an insulating film like cerium oxide. A trench for a metal wiring or an aperture part for a connection wiring are formed on the insulating film 2, and a contact metal layer 3 composed of titanium or the like and a barrier metal layer 4 composed of titanium nitride or the like are laminated and formed by a CVD method on the trench or the aperture part. A metal film 5 for wiring having a thickness higher than or equal to the height of the trench or the aperture part which is formed on the insulating film 2 is buried. The metal film 5 is polished and eliminated by using composite for polishing a metal film which is composed of oxide containing magnesium and hydroxide abrasives.