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发明名称
METHOD OF FORMING SPACERS IN CMOS DEVICES
摘要
<p>A sidewall spacer is formed in a CMOS device by depositing a layer of silicon nitride on a wafer and anisotropically etching away the silicon nitride layer with a chorinebased plasma etchant.</p>
申请公布号
WO2001084628(A1)
申请公布日期
2001.11.08
申请号
CA2001000639
申请日期
2001.05.03
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发明人
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