| 摘要 |
<p>A method of modifying a surface of a semiconductor wafer is disclosed. The method includes: (a) contacting the wafer with a fixed abrasive article in the presence of a composition that includes water and a polar component having from 1 to 10 functional groups selected from the group consisting of -OH, -OOH, =O, and combinations thereof, and from 1 to 10 consecutive groups selected from the group consisting of -CH2-, -CH2O-, -C2H4O-, -C3H6O- and combinations thereof; and (b) relatively moving the wafer and the fixed abrasive article to modify the surface of the wafer.</p> |
