| 发明名称 |
REFINING METHOD OF F2 GAS |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a refining method of F2 gas to be a raw material of a fluoride gas used in a semiconductor field as a cleaning gas or an etching gas. SOLUTION: Gaseous F2 containing CF4 is cooled and liquefied and the gaseous F2 is selectively vaporized.
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| 申请公布号 |
JP2002029707(A) |
申请公布日期 |
2002.01.29 |
| 申请号 |
JP20000216364 |
申请日期 |
2000.07.17 |
| 申请人 |
CENTRAL GLASS CO LTD |
发明人 |
NAKAMURA RYUICHI;ONOE KOICHI |
| 分类号 |
F25J1/00;C01B7/20;C23C16/44;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):C01B7/20;H01L21/306 |
主分类号 |
F25J1/00 |
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