发明名称 CHARGED PARTICLE BEAM EXPOSURE METHOD, CHARGED PARTICLE BEAM ALIGNER AND DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method or the like which minimizes influence of change of blurring, which depends on pattern density, and improves imaging performance and throughput. SOLUTION: Square-sum (total blurring) of blurring (chain line) by space charge effect and blurring (broken line) by geometric aberration is shown by a solid line. When a beam current I is 5μA, it is a minimum value of 30 [nm] or thereabout at a beam spread angle of about 5.5 [mrad], and when a beam current I is 25μA, it is 92 [nm] or thereabout at about 8.0 [mrad]. Therefore, a spread angle of projection beam of an aligner is made variable in the range of 5 to 8 [mrad], for example. Thereby, total blurring at each beam current value can be made minimum.
申请公布号 JP2002329659(A) 申请公布日期 2002.11.15
申请号 JP20010135207 申请日期 2001.05.02
申请人 NIKON CORP 发明人 FUJIWARA TOMOHARU;SUZUKI KAZUAKI
分类号 G03F7/20;G03F9/02;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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