| 摘要 |
The present invention concerns a reference voltage generator (40) that provides a reference voltage (Vref new). The voltage generator (30) is operated at a supply voltage (Vdd) being lower than the Silicon bandgap voltage. It comprises a MOSFET transistor (MN; MN3; MP4; MP7) serving as transconductor (Gptat). An input node for feeding a drain current (I<SUB>ptat</SUB>) into the drain of said MOSFET transistor (MN; MN3; MP4; MP7) is provided and an output node is connected to the drain and gate of said MOSFET transistor (MN; MN3; MP4; MP7). A current generator (42) allows the MOSFET transistor (MN; MN3; MP4; MP7) to be operated in a specific mode where the drain current (I<SUB>ptat</SUB>) has a positive temperature coefficient (a<SUB>ptat</SUB>) and the transconductor (Gptat) has a negative temperature coefficient (a<SUB>GM</SUB>). The dimensions (W, L) of the MOSFET transistor are chosen such that said negative temperature coefficient (aGM) approximates said positive temperature coefficient (a<SUB>ptat</SUB>) such that said reference voltage (Vref new), as provided at said output node, is temperature-compensated. |
