发明名称 |
METHOD OF PRODUCING A LIGHT-EMITTING DIODE COMPRISING A NANOSTRUCTURED PN JUNCTION AND DIODE THUS OBTAINED |
摘要 |
A nanostructured pn junction light-emitting diode is fabricated from a semi-conducting substrate doped by a first dopant and covered by a dielectric thin layer. An amorphous thin film formed by a semi-conducting material doped by a second dopant of opposite type to that of the first dopant is then deposited on the surface of the dielectric thin layer. The assembly then undergoes a thermal treatment designed to form, in the dielectric thin layer and from the amorphous thin film, a plurality of dots of nanometric size and made of semi-conducting material doped by the second dopant. The dots are designed to be in epitaxial relationship with the substrate to form a plurality of pn junctions of nanometric size. An additional thin layer is then formed by epitaxial growth from the dots. |
申请公布号 |
EP1859478(A1) |
申请公布日期 |
2007.11.28 |
申请号 |
EP20060709371 |
申请日期 |
2006.02.23 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
NOE, PIERRE;MAZEN, FREDERIC |
分类号 |
H01L21/20;H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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