Method of forming a ferroelectric layer and Method of manufacturing a semiconductor device using the same,申请号KR20050041568-传众专利搜索

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发明名称	Method of forming a ferroelectric layer and Method of manufacturing a semiconductor device using the same
摘要
申请公布号	KR100785458(B1)	申请公布日期	2007.12.13
申请号	KR20050041568	申请日期	2005.05.18
申请人		发明人
分类号	H01L27/105;B24B37/00;B24B37/005;H01L21/304;H01L21/316;H01L21/8246	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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