A process for stripping photoresist from a substrate is provided. A processing system for implanting a dopant into a layer of a film stack, annealing the stripped film stack, and stripping the implanted film stack is also provided. When high dopant concentrations are implanted into a photoresist layer, a crust layer may form on the surface of the photoresist layer that may not be easily removed. The methods described herein are effective for removing a photoresist layer having such a crust on its surface.
申请公布号
WO2008073906(A3)
申请公布日期
2008.09.12
申请号
WO2007US87008
申请日期
2007.12.10
申请人
APPLIED MATERIALS, INC.;CHO, SEON-MEE;FOAD, MAJEED, A.