SPIN TRANSISTOR AND NONVOLATILE MEMORY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory which stores information into a ferromagnetic material included in a transistor according to a magnetization state and reads the information out by using output characteristics of the transistor depending upon the direction of a spin of a carrier. SOLUTION: The transistor has: a tunnel junction structure comprising a tunnel barrier 365 made of an insulating nonmagnetic substance, and a source 361 formed of a ferromagnetic material, and a drain 363 formed of a ferromagnetic material, between which the tunnel barrier 365 is disposed; and a gate electrode 371 formed with respect to the tunnel barrier 365. COPYRIGHT: (C)2009,JPO&INPIT