发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent corrosion of metal inside a processing chamber, to enlarge an etching rate of a film attaching to a heat-resistant nonmetallic member (e.g., quartz member) and to prevent quartz powder from remaining in a processing chamber. SOLUTION: The method includes: a step for storing a substrate in a processing chamber with a heat-resistant nonmetallic member in the inside and performing film formation for the substrate by supplying film formation gas; a step for removing an adhered matter attaching to the heat-resistant nonmetallic member by supplying cleaning gas into the processing chamber after removal of the substrate after film formation; and a step for removing residue remaining in a surface of the heat-resistant nonmetallic member after removal of the adhered matter by supplying F<SB>2</SB>gas, or F<SB>2</SB>gas and HF gas into the processing chamber. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009135531(A) 申请公布日期 2009.06.18
申请号 JP20090061424 申请日期 2009.03.13
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NOMURA HISASHI;KAMEDA KENJI;MINAMI MASAKATSU
分类号 H01L21/31;C23C16/44 主分类号 H01L21/31
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