| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a plurality of dual-face electrode elements formed using a pn column region and suppresses a short-circuit due to a transient signal while it is downsized, and also to provide a method of manufacturing the semiconductor device. SOLUTION: In the semiconductor device having a plurality of element formation regions divided by isolation separation trenches on a semiconductor substrate, pairs of electrodes are arranged on the front and rear surfaces of the semiconductor substrate to be separated from each other, and a pn column region is provided on the semiconductor substrate as a region for forming dual-face electrode elements through which currents flow between the electrodes. The isolation separation trenches are formed so that each element formation region forming the dual-face electrode element includes a p-conductivity type semiconductor region and an n-conductivity type semiconductor region forming the pn column region, and the dual-face electrode elements are formed to use the p- or n-conductivity type semiconductor region as a drift region. COPYRIGHT: (C)2009,JPO&INPIT
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