| 摘要 |
PROBLEM TO BE SOLVED: To acquire an image of high quality by preventing signal electric charges from leaking to an adjacent region beyond an element isolation region by making higher a potential barrier of the element isolation region. SOLUTION: Disclosed is the solid-state imaging element having: photoelectric conversion elements 12; charge transfer channels 24 connected to the respective photoelectric conversion elements 12 through gate portions 40; element isolation regions 38, formed on a semiconductor substrate 22; and also at least one stage of charge transfer electrodes 28 serving also as charge reading electrodes covering the gate portions 40 out of a plurality of stages of charge transfer electrodes 28 and 30 formed on the semiconductor substrate 22 through an insulating film 26. The insulating film 26 in the element isolation regions 38 being made thinner, excluding regions below the electrodes 28 serving charge reading electrodes and regions above the charge transfer channels 24 than the insulating film 26 in the regions blow the electrodes 28 serving as charge reading electrodes and the regions above the charge transfer channels 24. COPYRIGHT: (C)2009,JPO&INPIT
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